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Electron

發(fā)布時間： 2025-3-9關(guān)注次數(shù)：121

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Electron

Volume 3, Issue 1

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February 2025

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Sb-Se-based electrical switching device with fast transition speed and minimized performance degradation due to stable mid-gap states

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Xianliang Mai^1,?, Qundao Xu^1,?, Zhe Yang^1,?, Huan Wang¹, Yongpeng Liu¹, Yinghua Shen¹, Hengyi Hu¹, Meng Xu², Zhongrui Wang², Hao Tong^1,3, Chengliang Wang^1,*, Xiangshui Miao^1,3, Ming Xu^1,3,*

華中科技大學(xué)徐明教授、王成亮教授

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¹ Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China

² Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China

³ Hubei Yangtze Memory Laboratories, Wuhan, China

^? Xianliang Mai, Qundao Xu and Zhe Yang contributed equally to this work.

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